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...MOSFETs Transistors PG-HDSOP-16 Product Description Of IAUTN06S5N008T IAUTN06S5N008T is optiMOS™ 5 Automotive Power MOSFET, 60 V Transistors,the package is PG-HDSOP-16. Specification Of IAUTN06S5N008T Part N...
Mosfet Power Transistor STL26N60DM6 MOSFET N-channel 600 V, 175 mOhm typ HV package Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series. Compared with the p...
... volts. Higher voltages are not so easily achievable. Where the Power MOSFETs are used, it is their low ON resistance that is particularly attractive. This reduces power dissipation which reduces cost and si...
Mosfet Power Transistor STL26N60DM6 MOSFET N-channel 600 V, 175 mOhm typ HV package Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series. Compared with the p...
... volts. Higher voltages are not so easily achievable. Where the Power MOSFETs are used, it is their low ON resistance that is particularly attractive. This reduces power dissipation which reduces cost and si...
...Mosfet Arrays Full Bridge SiC Power Module Product Description Of MSCSM120HM063CAG MSCSM120HM063CAG is a 700 V/464 A full bridge silicon carbide power module.Operates at 1.3V forward voltage at 90A, 1.6kV re...
... MOSFET Typical Applications Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXF...
... MOS FET is built in for high efficiency in small load area.Lower electricity consumption of operating current 4mA (Typ) and stand-by current 0uA(Typ) is realized by adopting Bi-CMOS process. ●Features 1) Ma...
...MOSFETS General Description VDSS= V ID= 6.0 A 20 z RDS(on) < Ω@VGS = 4.5V 25 mz 20z RDS(on) < Ω@VGS = 2.5V 32 m 2532mm FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and ...
High Switching Speed Mosfet Power Transistor For Linear Power Supplies General Description • Trench Power MOSFET technology • Low R DS(ON) • Logic Level Driving • RoHS and Halogen-Free Compliant Application • ...
High Switching Speed Mosfet Power Transistor For Linear Power Supplies General Description • Trench Power MOSFET technology • Low R DS(ON) • Logic Level Driving • RoHS and Halogen-Free Compliant Application • ...
High Switching Speed Mosfet Power Transistor For Linear Power Supplies General Description • Trench Power MOSFET technology • Low R DS(ON) • Logic Level Driving • RoHS and Halogen-Free Compliant Application • ...
...MOSFETS General Description VDSS= V ID= 6.0 A 20 z RDS(on) < Ω@VGS = 4.5V 25 mz 20z RDS(on) < Ω@VGS = 2.5V 32 m 2532mm FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and ...
High Switching Speed Mosfet Power Transistor For Linear Power Supplies General Description • Trench Power MOSFET technology • Low R DS(ON) • Logic Level Driving • RoHS and Halogen-Free Compliant Application • ...
..., high-power, 8-pin, surface mount molded package. Specification Of QH8MA4TCR Part Number QH8MA4TCR Gate Charge (Qg) (Max) @ Vgs 15.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 640pF @ 15V Power - Max 1.5W...
...MOSFET with Ultra-Low 1.7mandOmega; RDS(on) TO-220 Package 100% Avalanche Tested Fast Switching High Power Density andamp; Industrial-Grade Reliability andnbsp; Features Advanced Process Technology Ultra Low...
... and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devic...
... and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devic...
...MOSFET N-CH 80V 110A 3-Pin(3+Tab) TO-220 Tube General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power ...
...MOSFET N-CH 80V 110A 3-Pin(3+Tab) TO-220 Tube General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power ...