Total 100000 products for power mosfet operation Manufacture & Suppliers

• IRF640NPBF Power Mosfet Transistor general purpose mosfet HEXFET Power MOSFET

  

  ...HEXFET® Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free Description Fift...

  ChongMing Group (HK) Int'l Co., Ltd

  China

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• F4N65L TO-220F-3L POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors

  

  ...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better char...

  Shenzhen Hunt Electronics Co., Ltd

  Guangdong,China

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• High Power MOSFET ATP113 P-Channel Power MOSFET, -60V, -35A, 29.5mΩ

  

  High Power MOSFET ATP113 P-Channel Power MOSFET, -60V, -35A, 29.5mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and ......

  Sunbeam Electronics (Hong Kong) Limited

  China

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• IXFK27N80Q N Channel Mosfet Transistor 800V 27A 0.32 Rds Power MOSFETs HiPerFET

  

  IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Featur...

  Shenzhen Retechip Electronics Co., Ltd

  Guangdong,China

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• Integrated Circuit Chip FDBL9403-F085T6 Power MOSFET Single N-Channel Transistors

  

  ... m, 300 A Transistors. Specification Of FDBL9403-F085T6 Part Number FDBL9403-F085T6 Qg - Gate Charge: 108 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C Pd - Power Dissipatio...

  ShenZhen Mingjiada Electronics Co.,Ltd.

  China

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• STP100N8F6 Audio Power Mosfet N Channel 80 V 0.008 Ohm Type 100 A StripFET F6

  

  ...MOSFET N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a ne...

  Shenzhen Weitaixu Capacitor Co.,Ltd

  Guangdong,China

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• 2N60 2A, 600VN-CHANNEL POWER MOSFET

  

  ...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high e...

  Shenzhen Hua Xuan Yang Electronics Co.,Ltd

  Guangdong,China

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• Power MOSFET Original Integrated Circuit IPT020N10N5ATMA1

  

  Power MOSFET Original Integrated Circuit IPT020N10N5ATMA1 Product Description Less paralleling required Increased power density Reduced switching and conduction losses Product Specifications Part Number: IPT020...

  Shenzhen Tengshengda ELECTRIC CO., LTD.

  Guangdong,China

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• IR21094STRPBF SOP14 N Channel Power MOSFET IGBT Drivers

  

  IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output ch...

  Shenzhen ATFU Electronics Technology ltd

  Guangdong,China

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• Integrated Circuit Chip IRF7342Q - International Rectifier - HEXFET Power MOSFET

  

  ...Power MOSFET Description: Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistan...

  Mega Source Elec.Limited

  China

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• High Speed Gate Driver IC JY21L Optimal Control For Power MOSFET And IGBT

  

  ...product is a high voltage, high speed power MOSFET and IGBT driver based on P-SUB P-EPI process. The floating channel driver can be used to drive two N-channel power MOSFET or IGBT independently which operat...

  Changzhou Bextreme Shell Motor Technology Co.,Ltd

  Jiangsu,China

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• JUYI Tech JY09M N Channel Enhancement MOS IC TO-220 70V90A Power Mosfet

  

  ... density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of...

  Shanghai Juyi Electronic Technology Development Co., Ltd

  Shanghai,China

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• IRFP4710 N-Channel Power Mosfet Transistor Power Transistor IRFP4710PBF IRFP 100V 72A 190W TO-247

  

  ...MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 72A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 14 mOhm @ 45A, 10V Vgs(th) (Max) @ I...

  Shenzhen Quanyuantong Electronics Co., Ltd.

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• Ultra-Low 0.0015Ω Power MOSFET in Dual PQFN with Avalanche Rating AEC-Q101 175°C -40V/-30V Logic Level and Halogen-Free for High-Efficiency Power Conversion

  

  ...Power MOSFET in Dual PQFN with Avalanche Rating AEC-Q101 175anddeg;C -40V/-30V Logic Level and Halogen-Free for High-Efficiency Power Conversion andnbsp; Features Ultra-Low Gate Impedance Fully Characterized...

  TOP Electronic Industry Co., Ltd.

  China

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• Infineon HEXFET Power MOSFET N Channel 55V 30A DPAK IRLR3915TRPBF

  

  ... Semiconductor Products N-Channel 55 V 30A (Tc) 120W (Tc) Surface Mount D-Pak Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silico...

  Guangzhou Topfast Technology Co., Ltd.

  Guangdong,China

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• N Channel Power MOSFET VISHAY SIR668ADP T1 RE3 100 Volt Drain Source Breakdown Voltage for Switching

  

  ...optimized for the lowest RDS(on) x Qoss FOM. This MOSFET is 100% tested for Rg and UIS, making it suitable for demanding applications such as synchronous rectification, primary side switching, DC/DC converte...

  Hefei Purple Horn E-Commerce Co., Ltd.

  Anhui,China

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• NTHD3100CT1G - ON Semiconductor - Power MOSFET 20 V, +3.9 A /−4.4 A, Complementary ChipFET

  

  ... - Power MOSFET 20 V, +3.9 A /−4.4 A, Complementary ChipFET. Detailed Description of NTHD3100CT1G: EIS Part Number: EIS-NTHD3100CT1G Manufacturer Part Number: NTHD3100CT1G Manufacturer / Brand: ON Semiconduc...

  Excellent Integrated System LIMITED (EIS LIMITED)

  HongKong

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• NTHD3100CT1G - ON Semiconductor - Power MOSFET 20 V, +3.9 A /−4.4 A, Complementary ChipFET

  

  ... - Power MOSFET 20 V, +3.9 A /−4.4 A, Complementary ChipFET. Detailed Description of NTHD3100CT1G: EIS Part Number: EIS-NTHD3100CT1G Manufacturer Part Number: NTHD3100CT1G Manufacturer / Brand: ON Semiconduc...

  Excellent Integrated System LIMITED (EIS LIMITED)

  HongKong

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• FuII power output at 70~100% constant power mode operation For Long-Lasting LED Lighting

  

  ...power output at 70~100% constant power mode operation For Long-Lasting LED Lighting Product discription Output Power 159.9W Output Current 3300mA Output Voltage 60V Input Voltage 90-305VAC Efficiency 93% Siz...

  Sunshine Opto-electronics Enterprise Co.,ltd

  Guangdong,China

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• Low Gate Charge Igbt Mosfet High Power N Channel Power Mosfet 600V TO247-3

  

  Infineon MOSFET N-Ch 650V 20.7A TO247-3 CoolMOS C3,600V CoolMOS��� C3 is Infineon's third series of CoolMOS��� Replacement for 600V CoolMOS��� C3 is CoolMOS��� P7 600V CoolMOS��� C3 is Infineon's third series of CoolMOS���...

  Shenzhen Hongxinwei Technology Co., Ltd

  Guangdong,China

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