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...replace all linear and capacitor-fed (cap dropper) non-isolated power supplies in the under 360 mA output current range at equal system cost while offering much higher performance and energy efficiency. Link...
...Power Integrations Product Details Description LinkSwitch-TN is specifically designed to replace all linear and capacitor-fed (cap dropper) non-isolated power supplies in the under 360 mA output current rang...
...Power Integrations Product Details Description LinkSwitch-TN is specifically designed to replace all linear and capacitor-fed (cap dropper) non-isolated power supplies in the under 360 mA output current rang...
...Power Integrations Product Details Description LinkSwitch-TN is specifically designed to replace all linear and capacitor-fed (cap dropper) non-isolated power supplies in the under 360 mA output current rang...
BTS6163D ic Smart Highside Power Switch Smart Highside Power Switch Reversave Reverse battery protection by self turn on of power MOSFET Short circuit protection with latch Current limitation Overload protecti...
...Power Switch Four Channels programmed integrated led circuit board General Description • N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, mon...
...MOSFETs RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-247-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 600 V Id - Contin...
... Response – 2 μs (Typical) 70-mΩ (Typical) High-Side N-Channel MOSFET Operating Range: 4.5 V to 5.5 V Deglitched Fault Reporting (FLTx) Selected Parts With (TPS20xxC) and Without (TPS20xxC-2) Output Discharg...
...Power Switch Two Channels: 2 x 100mΩ Status Feedback Suitable for 42V Product Summary Operating Voltage Vbb(on) 7.0 ... 58V Active channels One two parallel On-state Resistance RON 105mΩ 53mΩ Nominal load cu...
...Power Switch Two Channels: 2 x 30mΩ Current Sense Product Summary Package Operating Voltage Vbb(on) 5.0...34V Active channels one two parallel On-state Resistance RON 30mΩ 15mΩ Nominal load current IL(NOM) 5...
...Mosfet Power Transistor For Battery Protection 60V/5A Feature Description 60V/5A R DS(ON) = 40 mΩ(typ.)@V GS = 10V R DS(ON) = 48 mΩ(typ.)@V GS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen F...
AP2322GN Original General Purpose Power Transistor/MOSFET/Power Switch IC Chips This product is sensitive to electrostatic discharge, please handle with care. This product is not authorized to be used as a crit...
...Mosfet Power Transistor For Battery Protection 60V/5A Feature Description 60V/5A R DS(ON) = 40 mΩ(typ.)@V GS = 10V R DS(ON) = 48 mΩ(typ.)@V GS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen F...
AP2322GN Original General Purpose Power Transistor/MOSFET/Power Switch IC Chips This product is sensitive to electrostatic discharge, please handle with care. This product is not authorized to be used as a crit...
...MOSFET half-bridge power module designed for high-current density applications. It features high ruggedness, easy paralleling, and low on-state resistance, making it suitable for DC/DC converters, UPS system...
...MOSFET Description The 5G03S/DF uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a ho...
HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. Thiscomplementary N and P channel MOSFET configurationis ideal for low I...
QM4803D N-Ch and P-Channel MOSFET Description The QM4803D is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gatecharge for most of the sy...
...MOSFET DESCRIPTION The AP50N20D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a ho...
STW48NM60N Transistors MOSFET N-CH 600V 44A 3-Pin(3+Tab) TO-247 Tube General Description : This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionar...