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...MOSFETs Transistors Product Description Of IPDQ60R040S7XTMA1 IPDQ60R040S7XTMA1 Power MOSFETs are superjunction MOSFETs that address xEV applications where MOSFETs are switched at low frequency. Specification...
...Mosfet 28V 400 mA 2.7GHz ~ 2.9GHz 14dB 350W SOT502A Manufacturer: Ampleon Product Category: RF MOSFET Transistors Technology: Si Id - Continuous Drain Current: 1.4 uA Vds - Drain-Source Breakdown Voltage: 28...
...MOSFET Single Tube TO-263-8 Product Description Of IMBG65R083M1HXTMA1 IMBG65R083M1HXTMA1 is Silicon Carbide MOSFET Single Tube, in a compact 7-pin SMD package, is designed to improve system performance, red...
... a level shifted high side switch, and for a host of other applicatio Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply Absolute Maximum Rat...
...MOSFET Description The WST2078 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and...
...freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial Application Categories Mosfet Power Transistor BSZ037N06LS5ATMA1 Packa...
Mosfet Power Transistor STWA65N60DM6 Mosfet N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power TO-247 Feature • Extremely low RDS(on)*area and Qg and optimized capacitance profi le for light load conditions...
...freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial Application Categories Mosfet Power Transistor BSZ037N06LS5ATMA1 Packa...
Mosfet Power Transistor STWA65N60DM6 Mosfet N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power TO-247 Feature • Extremely low RDS(on)*area and Qg and optimized capacitance profi le for light load conditions...
... a level shifted high side switch, and for a host of other applicatio Application ● Power switching application ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply Absolute Maximum Rat...
...MOSFET Description The WST2078 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and...
... Frequency from 200 kHz to 2.5 MHz • Frequency Synchronization to External Clock • Internal Compensation for Ease of Use • High Duty Cycle Operation Supported • Precision Enable Input • 1 µA Shutdown Current...
... - Device CDM ESD Classification Level C4A • 4 V to 40 V Input Range • 2 A Continuous Output Current • Ultra-low 40 µA Operating Quiescent Current • 90 mΩ High-Side MOSFET • Minimum Switch-On Time: 75 ns • C...
MOSFET Transistors TIP122 Darlington NPN 100V 5A 2000mW TO220 Power Transistor TIP120, TIP121, TIP122 TIP125, TIP126, TIP127 Description The devices are manufactured in planar technology with “base island” layo...
MOSFET Transistors TO-3P TIP147 10A 100V PNP Darlington Bipolar Power Transistor TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Description The devices are manufactured in planar technology with “...
Darlington Bipolar Mosfet Power Transistor TIP142 for amplifier and switching applications TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Description The devices are ......
... translator suitable for driving a wide range of higher power industrial bipolar 2-phase stepper motors (typically 30 to 500 W). Motor power is provided by external N-channel power MOSFETs at supply voltages...
...Integrated internal high-side high voltage power MOSFET switching regulator Description The MP2451 is a high frequency (2MHz) stepdown switching regulator with integrated internal high-side high voltage powe...
IR2110PBF power MOSFET and IGBT drivers Ic Chip Half-Bridge Gate Driver IC 14-DIP Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side refe...
...Mosfet Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combine...