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Total 100014 products for power mosfet operation Manufacture & Suppliers

High Frequency Mosfet Power Transistor For Telecom / Industrial Use IRLR7843TRPBF

Transistor IRLR7843TRPBF TO-252 30V 161A Power MOSFET for Telecom and Industrial Use IRLR7843PbF IRLU7843PbF Description Power MOSFET Selection for Non-Isolated DC/DC Converters Absolute Maximum Ratings Paramet...

ChongMing Group (HK) Int'l Co., Ltd
China

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MT9700 80mΩ,Adjustable Fast ResponseCurrent-Limited Power-Distribution Switch

...Power-Distribution Switch The MT9700 is an 80mΩ adjustable fast response current-limited power-distribution switch designed for high-performance power management applications. Product Features Compliant to U...

Shenzhen Filetti Technology Co., LTD
China

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Integrated Circuit Chip IMBG65R107M1HXTMA1 N-Channel 650V MOSFETs Transistors

...MOSFETs Transistors Product Description Of IMBG65R107M1HXTMA1 IMBG65R107M1HXTMA1 is 650V CoolSiC M1 SiC Trench Power Device, SMD Compact Package SiC MOSFETs. Specification Of IMBG65R107M1HXTMA1 Part Number ...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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MSCSM120HM31CTBL2NG Automotive IGBT Modules N-Channel Mosfet Array Transistors

...Mosfet Array Transistors Product Description Of MSCSM120HM31CTBL2NG MSCSM120HM31CTBL2NG device is a full bridge 1200 V/79 A silicon carbide (SiC) MOSFET power module. Specification Of MSCSM120HM31CTBL2NG Par...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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STL150N3LLH5 MOSFET N-channel 30 V PowerFLAT N P Channel Mosfet

... Current: 150 A Rds On - Drain-Source Resistance: 1.75 mOhms Vgs - Gate-Source Voltage: - 22 V, + 22 V Minimum Operating Temperature: -...

Wisdtech Technology Co.,Limited
Guangdong,China

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20G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET

20G04S 40V N+P-Channel Enhancement Mode MOSFET Description The 20G04S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shi...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30m

HXY4606 30V Complementary MOSFET Description The HXY4606 uses advanced trench technologyMOSFETs to provide excellent RDS(ON) and low gatecharge. The complementary MOSFETs may be used toform a level shifted high...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge

QM4803D�� N-Ch and P-Channel MOSFET Description The WSF6012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the s...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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20G04S 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET

20G04S 40V N+P-Channel Enhancement Mode MOSFET Description The 20G04S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shi...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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HXY4606 30V Mosfet Power Transistor Complementary MOSFET RDS(ON) < 30m

HXY4606 30V Complementary MOSFET Description The HXY4606 uses advanced trench technologyMOSFETs to provide excellent RDS(ON) and low gatecharge. The complementary MOSFETs may be used toform a level shifted high...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge

QM4803D�� N-Ch and P-Channel MOSFET Description The WSF6012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the s...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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TLV62085RLTR Power Path Management IC Switching Voltage Regulators Datasheet spin of TPS62085

...Power Path Management IC Switching Voltage Regulators Datasheet spin of TPS62085 1 Features DCS-ControlTM Topology Up to 95% Efficiency 17-μA Operating Quiescent Current 31mΩ and 23mΩ Power MOSFET Switch 2.5...

ChongMing Group (HK) Int'l Co., Ltd
China

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PD57018-E RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Black RF MOSFET Transistors

...-Continuous Drain Current: 2.5 A Vds-drain-source breakdown voltage: 65 V Rds On-Drain Source On Resistance: 760 mOhms Operating frequency: 1 GHz Gain: 16.5 dB Output power: 18 W Minimum operating temperatur...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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PD57018-E RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Black RF MOSFET Transistors

...-Continuous Drain Current: 2.5 A Vds-drain-source breakdown voltage: 65 V Rds On-Drain Source On Resistance: 760 mOhms Operating frequency: 1 GHz Gain: 16.5 dB Output power: 18 W Minimum operating temperatur...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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10G03S N + P Channel Transistor , Mosfet Power Electronic Transistor

...MOSFET Description The 10G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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20G04GD 40V Mosfet Power Transistor N+P Channel Enhancement Mode MOSFET

...MOSFET Description The 20G04GD uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES N-CH...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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Logic Level Driving Mosfet Power Transistor For Industrial And Motor Drive

AOD442G 60V N-Channel MOSFET General Description • Trench Power MV MOSFET technology • Low R DS(ON) • Logic Level Driving • RoHS and Halogen-Free Compliant Application Industrial and Motor Drive applications .....

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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Motor Control Mosfet Power Transistor With Low Resistance Package

...MOSFET General Description The AOD478/AOI478 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) . This device is ideal for boost converters and synchr...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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Boost Converters Mosfet Power Transistor With High Switching Speed

...MOSFET General Description The AOD482/AOI482 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON) . This device is ideal for boost converters and synchro...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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10G03S N + P Channel Transistor , Mosfet Power Electronic Transistor

...MOSFET Description The 10G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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