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.... Fast Switching. Fully Avalanche Rated. Lead-Free. Absolute Maximum Ratings : Description : Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extr...
.... Fast Switching. Fully Avalanche Rated. Lead-Free. Absolute Maximum Ratings : Description : Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extr...
Enhancement Mode N Channel Transistor / Logic Mosfet Switch Surface Mount Package N Channel Transistor Description The 18N20X uses advanced Plane technology to provide excellent Rds(on), low gate charge and ope...
...(th) (Max) @ Id 2.5V @ 250µA Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V Power Dissipation (Max) 200mW (Ta) Operating Temperature -55°C ~ 150°C...
...MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 195A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.5 mOhm @ 170A, 10V Vgs(th) (Max) @...
...MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 14A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 280mOhm @ 7A, 10V Vgs(th) (Max) @ Id...
...MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 104A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 11mOhm @ 62A, 10V Vgs(th) (Max) @ I...
...MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75V Current - Continuous Drain (Id) @ 25°C 209A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4.5mOhm @ 125A, 10V Vgs(th) (Max) @ ...
.../P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 160V Current - Continuous Drain (Id) @ 25°C 7A (Ta) Vgs (Max) ±15V Input Capacitance (Ciss) (Max) @ Vds 600pF @ 10V Power Dissipation...
...MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1Ohm @ 4A, 10V Vgs(th) (Max) @ Id 4...
...) @ Id 1.5V @ 1mA Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V FET Feature - Power Dissipation (Max) 225mW (Ta) Operating Temperature -55°C...
...) @ Id 3V @ 1mA Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 50pF @ 25V FET Feature - Power Dissipation (Max) 400mW (Ta) Operating Temperature -55°C ~ 150°C...
...MOSFET and PressFIT / NTC The EasyDUAL module, featuring a CoolSiC Trench MOSFET and PressFIT technology with an integrated NTC temperature sensor, is designed for high-frequency switching applications. Its ...
...MOSFET Power Module 700V Product Description Of MSCSM70DUM017AG MSCSM70DUM017AG is a 700V/1021A 2 N-Channel (Dual) Common Source silicon carbide (SiC) MOSFET power module. Specification Of MSCSM70DUM017AG P...
...Mosfet Power Transistor MOSFET N-Ch 100V 100A TDSON-8 Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS...
...MOSFET Gate Drivers Type: High-Side, Low-Side Mounting Style: SMD/SMT Package / Case: SO-PowerPad-8 Number of Drivers: 2 Driver Number of Outputs: 2 Output Output Current: 4 A Supply Voltage - Min: 5 V Suppl...
...MOSFET Gate Drivers Type: High-Side, Low-Side Mounting Style: SMD/SMT Package / Case: SO-PowerPad-8 Number of Drivers: 2 Driver Number of Outputs: 2 Output Output Current: 4 A Supply Voltage - Min: 5 V Suppl...
... • Superior commutation ruggedness • Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) Benefits • Improves system efficiency • Improves power density •...
... • Superior commutation ruggedness • Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) Benefits • Improves system efficiency • Improves power density •...
... to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designe...