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... TO-247-3 MOSFET Product Description: Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and r...
... TO-264-3 MOSFET Product Description: Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and r...
SFH6156-2T DC-IN 1-CH Transistor DC-OUT 4-Pin PDIP SMD T/R Technical Attributes : Description Value Channel Mode Enhancement Channel Type N Max Processing Temp 260 Maximum Continuous Drain Current 15 A Maximum ...
SFH6156-2T DC-IN 1-CH Transistor DC-OUT 4-Pin PDIP SMD T/R Technical Attributes : Description Value Channel Mode Enhancement Channel Type N Max Processing Temp 260 Maximum Continuous Drain Current 15 A Maximum ...
...MOSFET Description The 6G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host ...
...making it ideal for high efficiency power management applications. Feature Low On-Resistance Low Input Capacitance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ......
Mosfet Power Transistor NTMFS5H419NLT1G MOSFET T8 40V Low Coss SMD/SMT Feature • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driv...
...making it ideal for high efficiency power management applications. Feature Low On-Resistance Low Input Capacitance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ......
Mosfet Power Transistor NTMFS5H419NLT1G MOSFET T8 40V Low Coss SMD/SMT Feature • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driv...
...MOSFET Description The 6G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host ...
...Power surface mount MOSFET for BLDC motor driver GENERAL DESCRIPTION: The JY4N8M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on‐resistance with low gate ...
...Power Transistor IRF9530PBF -100V -14A 200 MOhms 1 P-Channel 38.7 NC Applications Increased ruggedness Wide availability from distribution partners Industry standard qualification High performance in low fre...
... gripping lugs Double indicator 0% cadmium Applications gG: general purpose cable and line protection Description The NH1GG69V250P is a high-power Silicon Carbide (SiC) MOSFET module engineered for the most...
...MOSFET for BLDC motor driver GENERAL DESCRIPTION The JY12M is the N and P Channel logic enhancement mode power field transistors are produced using high cell density DMOS trench technology. This high density...
... using advanced and innovative 3rd generation SiC MOSFET technology. Specification Of SCT070HU120G3AG Part Number: SCT070HU120G3AG Total Power Dissipation At TC = 25 °C: 223W Storage Temperature Range: -55 °...
...Power Transistors IRFS4227TRLPBF 200V 62A 26mOhm 70nC Qg N Channel Mosfet Applications • Hard switching PWM stages and resonant switching stages • Adapter,LCD&PDP TV, Lighting Description This HEXFET® Power ...
N-Channel 1000V Mosfet STF5NK100Z Switching Application 3.5A 100V 3.7Ohm Power MOSFET Applications Switching application Description The new SuperMESH series of Power MOSFETS is the result of further design im...
...MOSFET P-Chan Drain-Source Breakdown Voltage 250 V Descriptions of Aviation Parts: Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon a...
...Mosfet Array 700V 689A 1882W Chassis Mount Product Description Of MSCSM70AM025CT6LIAG MSCSM70AM025CT6LIAG Power Modules are offered in 1200V and 1700V variants, with a case temperature (Tc) of +80°C. Specifi...
... RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. FEATURES ● Low Input Capacitance ● Fast Switching Speed APPLICATIONS ● Power Management ● DC...