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Total 100014 products for power mosfet operation Manufacture & Suppliers

BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet

BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet This series of plastic, medium��power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing comple...

ChongMing Group (HK) Int'l Co., Ltd
China

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2N60 2A, 600VN-CHANNEL POWER MOSFET

...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high e...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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4N60 -R 4A, 600V N-CHANNEL POWER MOSFET

...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high e...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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2N60 2A, 600VN-CHANNEL POWER MOSFET

...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high e...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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4N60 -R 4A, 600V N-CHANNEL POWER MOSFET

...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high e...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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Integrated Circuit Chip SCTWA60N120G2-4 Silicon carbide Power MOSFET Transistors

...Power MOSFET Transistors Product Description Of SCTWA60N120G2-4 SCTWA60N120G2-4 N-Channel Power MOSFET is a very high voltage N-channel Power MOSFET designed using the ultimate MDmesh K6 technology. Specific...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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IRF1010EPBF Power Mosfet Transistor Fast Switching HEXFET Power MOSFET

... Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast ....

ChongMing Group (HK) Int'l Co., Ltd
China

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IRF2907ZS-7PPBF Power Mosfet IC Transistor HEXFET® Power MOSFET

... Specifically designed for high current, high reliability applications, this HEXFET® Power MOSFET utilizes the latest processing techniques and advanced packaging technology to achieve extremely low on-resis...

ChongMing Group (HK) Int'l Co., Ltd
China

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IRF1407PBF HEXFET audio power mosfet , trench power mosfet 92 A

... Technology O Ultra Low On-Resistance O Dynamic dv/dt Rating O 175°C Operating Temperature O Fast Switching O Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive applica...

ChongMing Group (HK) Int'l Co., Ltd
China

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VN920-E HIGH SIDE DRIVER linear power mosfet trench power mosfet

... ■ THERMAL SHUTDOWN ■ CURRENT LIMITATION ■ PROTECTION AGAINST LOSS OF GROUND AND LOSS OF VCC ■ VERY LOW STAND-BY POWER DISSIPATION ■ REVERSE BATTERY PROTECTION (*) ■ IN COMPLIANCE WITH THE 2002/95/EC EUROPEA...

ChongMing Group (HK) Int'l Co., Ltd
China

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IRLL024NTRPBF Power Mosfet Transistor HEXFET® Power MOSFET Fast Switching

... to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well...

ChongMing Group (HK) Int'l Co., Ltd
China

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LM7805CT/NOPB Series Voltage Regulators high voltage power mosfet , dual power mosfet

LM7805C Series Voltage Regulators high voltage power mosfet , dual power mosfet Features �� Output current in excess of 1A �� Internal thermal overload protection �� No external components required �� Output transi...

ChongMing Group (HK) Int'l Co., Ltd
China

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MLP1N06CLG Power Mosfet Transistor VOLTAGE CLAMPED CURRENT LIMITING MOSFET high power mosfet transistors rf power mosfe

Internally Clamped, Current Limited N–Channel Logic Level Power MOSFET These SMARTDISCRETES devices feature current limiting for short circuit protection, an integral gate–to–source clamp for ESD protection and...

ChongMing Group (HK) Int'l Co., Ltd
China

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Short Circuit Power Mosfet Transistors Autoprotected VND3NV0413TR

... clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard Power MOSFET in...

ChongMing Group (HK) Int'l Co., Ltd
China

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Power MOSFET Original Integrated Circuit IPT020N10N5ATMA1

Power MOSFET Original Integrated Circuit IPT020N10N5ATMA1 Product Description Less paralleling required Increased power density Reduced switching and conduction losses Product Specifications Part Number: IPT020...

Shenzhen Tengshengda ELECTRIC CO., LTD.
Guangdong,China

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Integrated Circuit Chip STL24N60M6 Power MOSFET Transistors 600V 8PowerVDFN

...Power MOSFET Transistors 600V 8PowerVDFN Product Description Of STL24N60M6 STL24N60M6 is Single FETs Power MOSFET Transistors, Low gate input resistance, the Operating Temperature is -55°C ~ 150°C (TJ). Prod...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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N Channel IXTH24N50L Linear Power MOSFET Transistors TO-247 Single FETs Transistors

... Operation, the package is TO-247 (IXTH). Specification Of IXTH24N50L Part Number IXTH24N50L FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500 V Current - Continuous Drain...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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TC4420CPA high power mosfet transistors Power Mosfet Transistor 6A HIGH-SPEED MOSFET DRIVERS

...MOSFET DRIVERS FEATURES ■ Latch-Up Protected ............ Will Withstand >1.5A Reverse Output Current ■ Logic Input Will Withstand Negative Swing Up to 5V ■ ESD Protected .......................................

ChongMing Group (HK) Int'l Co., Ltd
China

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TO-247-4 MSC025SMA120 Silicon Carbide N-Channel Power MOSFET Transistors

... Voltage: - 10 V, + 23 V Vgs th - Gate-Source Threshold Voltage: 1.8 V Qg - Gate Charge: 232 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C...

ShenZhen Mingjiada Electronics Co.,Ltd.
China

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IR21094STRPBF SOP14 N Channel Power MOSFET IGBT Drivers

IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output ch...

Shenzhen ATFU Electronics Technology ltd
Guangdong,China

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