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...Power MOSFET GENERAL DESCRIPTION The product utilizes the advanced planar processing techniques to achieve the highcell density and reduces the on-resistance with high repetitive avalanche rating. These feat...
... and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide v...
... density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of...
...Power MOSFET Factory for 3 Phases DC Motor Driver GENERAL DESCRIPTION The product utilizes the advanced planar processing techniques to achieve the highcell density and reduces the on-resistance with high re...
...Mosfet Power Transistor MOSFET 30V N Channel NexFET Power MOSFET 1 Features Optimized for 5-V Gate Drive Ultra-Low Qg and Qgd Low Thermal Resistance Pb-Free RoHS Compliant Halogen-Free SON 2-mm × 2-mm Plasti...
...Mosfet Power Transistor MOSFET 40V N-Channel NexFET Power MOSFET 1 Features Ultra low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-...
... New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized de...
...: SiCFET (Silicon Carbide) Drain To Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 126A (Tc) Operating Temperature: -55°C ~ 175°C (TJ)...
...MOSFET Drivers Features • Latch-Up Protected: Will Withstand >1.5A Reverse Output Current • Logic Input Will Withstand Negative Swing Up To 5V • ESD Protected: 4 kV • Matched Rise and Fall Times: - 25 ns (25...
...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing ......
...MOSFET linear power mosfet trench power mosfet FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT23-6 package APPLICATIONS • DC–DC Converters • Power Management functi...
...Power MOSFET General Description Incorporating state-of-the-art trench processing techniques, the JY14M power field transistor operates with high cell density, resulting in reduced on-resistance and boasting...
...Mosfet Power Transistor MOSFET 60V, N-channel NexFET Pwr MOSFET 1 Features Ultra-Low Qg and Qgd Low-Thermal Resistance Avalanche Rated Lead-Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm P...
...Mosfet Power Transistor MOSFET P-CH Pwr MOSFET 1 Features Ultra-Low Qg and Qgd Low Thermal Resistance Low RDS(on) Pb and Halogen Free RoHS Compliant SON 3.3 mm × 3.3 mm Plastic Package 2 Applications DC-DC ...
... Fast switching speed. • High performance trench technology for extremely low RDS(ON). • High power and current handling capability General Description This N-Channel MOSFET is produced using Fairchild Semic...
...MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 72A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 14 mOhm @ 45A, 10V Vgs(th) (Max) @ I...
40V/70A P Channel Enhancement Mode Power MOSFET JY4P7M for High Current Load GENERAL DESCRIPTION The JY4P7M utilizes the latest trench processing techniques to achieve the high cell density and reduces the on...
...) ±30V Gate Charge (Qg) (Max) @ Vgs 259 nC @ 10 V Vgs(th) (Max) @ Id 5V @ 3mA Operating Temperature -55°C ~ 150°C (TJ) Power Dissipation (Max) 595W (Tc)...
...power mosfet DESCRIPTION Available either in through-hole of surface and T25 mount packages, the BTA/BTB24-25-26 triac series is suitable for general purpose AC power switching. They can be used as an ON/OFF...
... FET Type MOSFET N-Channel, Metal Oxide FET Feature Standard Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ ......