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... IRL3713SPbF IRL3713LPbF HEXFET Power MOSFET SMPS MOSFET Applications High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters for...
MMBTA43LT1G high voltage power mosfet transistors , rf power mosfet transistors High Voltage Transistors NPN Silicon ORDERING INFORMATION Device Order Number Package Type Shipping† MMBTA42LT1G ......
... DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing ......
... to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is...
... to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is...
A1101, A1102, A1103, A1104, and A1106 Continuous-Time Switch Family Features and Benefits Continuous-time operation Fast power-on time Low noise Stable operation over full operating temperature range ...
...MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 900V Current - Continuous Drain (Id) @ 25°C 39A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 220 mOhm @ 500mA, 10V Vgs(th) (Max) ...
Mosfet Power Transistor STO33N60M6 MOSFET N-channel 600 V, 105 mOhm typ., 26 A Feature • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tes...
Mosfet Power Transistor STO33N60M6 MOSFET N-channel 600 V, 105 mOhm typ., 26 A Feature • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tes...
... is PG-TO252-3(Surface Mount). Specification Of IPD06P004N Part Number IPD06P004N FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C...
... is 8-LFPAK, Surface Mount. Specification Of NTMJS1D4N06CLTWG Part Number NTMJS1D4N06CLTWG Technology MOSFET (Metal Oxide) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 1.3mOhm @ .....
1200V Silicon Carbide MSC017SMA120J N-Channel Power MOSFET Module SOT-227-4 Product Description Of MSC017SMA120J MSC017SMA120J is Silicon Carbide N-Channel Power MOSFET, 1200V, 17m SiC MOSFET in a SOT-227 pac...
... Circuit Chip MSC017SMA120B Silicon Carbide N-Channel Power MOSFET TO-247-3 Product Description Of MSC017SMA120B MSC017SMA120B is silicon carbide (SiC) power MOSFET, performance oversilicon MOSFET and silic...
.... Specification Of MSC080SMA120J Part Number: MSC080SMA120J Product: IGBT Silicon Carbide Modules Type: Power MOSFET Technology: SiC Vgs - Gate-Source Voltage: - 10 V, + 25 V Package / Case: SOT-227-4 Id - C...
...Power MOSFET Transistors TO-263-8 Product Description Of IMBG65R163M1HXTMA1 IMBG65R163M1HXTMA1 SMD Compact Package SiC MOSFET, CoolSiC™ MOSFET technology enhances the unique benefits of device performance, ...
...Power MOSFET Transistor 8-DFN Integrated Circuit Chip Product Description Of NTMFD5C470NLT1G NTMFD5C470NLT1G is Dual N-Channel 40V, 11.511.5mOhm, 36A Power MOSFET Transistors. Specification Of NTMFD5C470NLT1...
...Power MOSFET 5-DFN IC Chips Product Description Of NTMFS005N10MCLT1G NTMFS005N10MCLT1G is 100V, 5.1mOhm, 105A MOSFET – Power, Single N-Channel Transistors. Specification Of NTMFS005N10MCLT1G Part Number NTM...
HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die IXFK 27N80Q IXFR 27N80Q IXFX 27N80Q VDSS = 800 V ID25 = 27 A RDS(on) = 300 m trr ≤ 250 ......
...MOSFET linear power mosfet FEATURES * RDS(on)= 5Ω * 60 Volt VDS COMPLEMENTARY TYPE - ZVP3306F PARTMARKING DETAIL - MC ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Conti...
...MODE MOSFET low power mosfet SUMMARY V(BR)DSS = -60V; RDS(ON) = 0.400 ID =-1.1A FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • Low profile SOIC package APPLICATIONS • ...