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...Mosfet Power Transistor For Load Switch Power Management Mosfet Power Transistor DESCRIPTION The 50P03NF uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gat...
...Power Supplies SMPS Mosfet Power Transistor 50A 100V Mosfet Power Transistor Description: The AP50N10P uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate vo...
...Mosfet Power Transistor For Load Switch Power Management Mosfet Power Transistor DESCRIPTION The 50P03NF uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gat...
...Power Supplies SMPS Mosfet Power Transistor 50A 100V Mosfet Power Transistor Description: The AP50N10P uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate vo...
... Current: 30 A Vds - Drain-Source Breakdown Voltage: 70 V Operating Frequency: 175 MHz Gain: 13 dB Output Power: 300 W Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: DR Brand:...
...MOSFET Power Module The MSCSM120SKM11CT3AG is a 1200 V/254 A full Silicon Carbide (SiC) power module designed for buck chopper applications. It offers high efficiency, outstanding performance at high frequen...
... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies...
... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies...
... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies...
... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies...
..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to...
..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to...
... to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designe...
...Mosfet Power Transistor With High Switching Speed Mosfet Power Transistor Description: The AP8205S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltag...
...Mosfet Power Transistor With High Switching Speed Mosfet Power Transistor Description: The AP8205S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltag...
...Operational Amplifier Integrated circuit IC The high precision single SGM8040-1 and dual SGM8040-2 operational amplifiers are guaranteed to operate with a single supply voltage as low as 1.4V, while drawing ...
...Mosfet Power Transistor For Battery Powered System N Channel Mosfet Power Transistor Description: The AP5N10SI is the single N-Channel logic enhancement mode power field effect transistors to provide excelle...
...Mosfet Power Transistor For Battery Powered System N Channel Mosfet Power Transistor Description: The AP5N10SI is the single N-Channel logic enhancement mode power field effect transistors to provide excelle...
...MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Exc...
...POWER MOSFET DESCRIPTION The UTC 10N60K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avala...