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... for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rat...
...MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Exc...
...MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Exc...
...Mosfet Driver Using Transistor , Durable High Amp Transistor Mosfet Driver Using Transistor Description: The AP6H03Suses advanced trench technology to provide excellent RDS(ON) and low gate charge . The comp...
...Mosfet Power Transistor For Motor Control 30A 100V TO-220 Mosfet Power Transistor Description: The AP30N10P uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with ga...
... the frequency range of 1800 to 2200 MHz. This part is characterized and performance is guaranteed for applications operating in the 1800 to 2200 MHz band. There is no guarantee of performance when this part...
...Frequency N Channel Mos Field Effect Transistor types Within the overall arena of power MOSFETs, there are a number of specific technologies that have been developed and addressed by different manufacturers....
... the frequency range of 1800 to 2200 MHz. This part is characterized and performance is guaranteed for applications operating in the 1800 to 2200 MHz band. There is no guarantee of performance when this part...
...Frequency N Channel Mos Field Effect Transistor types Within the overall arena of power MOSFETs, there are a number of specific technologies that have been developed and addressed by different manufacturers....
... possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extreme...
... techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides ...
...Mosfet Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combine...
... MOSFETs Description: The IRFB7430PBF is a 100V, single N-channel HEXFET power MOSFET designed for use in high-performance applications such as power supplies, motor drives, and DC-DC converters. It features...
SIHW30N60E-GE3 High Performance 30A 600V N Channel MOSFET for Power Electronics Product Features: -High Speed Switching -Low Gate Charge -Low On-Resistance -TrenchFET Power MOSFET -Excellent Gate Charge x RDS(o...
... N-channel MOSFET 7. Fast switching capability 8. High power and current capability. Why buy from us >>> Fast / Safely / Conveniently • SKL is a Stock keeper and trade company of Electronic ......
Product Listing: IRF3205PBF MOSFET Parameters: Drain-Source Voltage: 55V Drain Current: 27A Continuous Drain Current: 27A Power Dissipation: 28W Gate-Source Voltage: 20V Operating Temperature: -55...
IRF1312PBF MOSFET Power Electronics High-Performance High-Reliability Solution for Your Applications Description: This is an advanced power MOSFET designed for use in a wide variety of switching applications. P...
... MOSFET High Performance Power Electronics Device for Maximum Efficiency Features: • 100V N-Channel MOSFET • Low On-Resistance • Low Gate Threshold Voltage • Low Output Capacitance • High Avalanche Energy • ...
...: The IRFB3607PBF is a 100V N-Channel MOSFET with a maximum drain current of 75A and a maximum drain-source voltage of 100V. This MOSFET features a low gate threshold voltage, low on-resistance, and fast swi...
...MOSFET Power Electronics High Performance and Durable Solution for Power Applications Vishay SI2301CDS-T1-GE3 N-Channel MOSFET, 30V, 3.2A, 3.2 Ohm, 8-Pin SOT-23 Product Features: - Low-profile package ideal ...