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CSD17573Q5B Mosfet Power Transistor MOSFET 30V, N-channel NexFET Pwr MOSFET 1 Features Low Qg and Qgd Ultra-Low RDS(on) Low-Thermal Resistance Avalanche Rated Lead-Free Terminal ......
CSD17556Q5B Mosfet Power Transistor MOSFET 30V N-Ch NexFET Power MOSFETs 1 Features Extremely Low Resistance Ultra-Low Qg and Qgd Low-Thermal Resistance Avalanche Rated Lead-Free ......
...Mosfet Field Effect Transistor Chip Circuit Protection 75V 170A Description Power MOSFT 75V 170A 4.1mOhm Single N-Channel HEXFET Power MOSFET in a D2-Pak package Specifications Product Attribute Attribute Va...
3A SS36 SMB Surface Mounted Schottky Barrier Rectifier Diode Transistors MOSFET Bridge rectifiers electronic component Name: 3A SS32 SS33 SS34 SS35 SS36 SS39 SS310 SS315 SS320 SMA/DO-......
SIR422DP-T1-GE3 IC Chips Integrated Circuits IC Transistor MOSFET SO-8 PRODUCT DESCRIPTION Part number # SIR422DP-T1-GE3 is manufactured by Vishay Technologies and distributed by Jalixin. As one of the leading ...
IRLML0060TRPBF Electronic Components IC Diode Transistor MOSFET Chips IC PRODUCT DESCRIPTION Part number # IRLML0060TRPBF is manufactured by Infineon Technologies and distributed by Jalixin. As one of the leadi...
... with the TC429), while the TC4420 is a non-inverting driver. These drivers are fabricated in CMOS for lower power and more efficient operation versus bipolar drivers. Both devices have TTL/CMOS compatible i...
... with the TC429), while the TC4420 is a non-inverting driver. These drivers are fabricated in CMOS for lower power and more efficient operation versus bipolar drivers. Both devices have TTL/CMOS compatible i...
...Transistors MOSFET N-CH 80V 110A 3-Pin(3+Tab) TO-220 Tube General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resu...
...Transistors MOSFET N-CH 80V 110A 3-Pin(3+Tab) TO-220 Tube General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resu...
TC4421A/TC4422A 9A High-Speed MOSFET Drivers Features • High Peak Output Current: 10A (typ.) • Low Shoot-Through/Cross-Conduction Current in Output Stage • Wide ......
...Mosfet Power Transistor MOSFET PowerMESH Zener SuperMESH Features Order codes VDS RDS(on) max. PTOT ID STP4NK60Z 600 V 2Ω 70 W 4A STP4NK60ZFP 100% avalanche tested Very low intrinsic capacitances • Zener-pro...
...Mosfet Power Transistor MOSFET 60V N-Chnl NexFET Pwr MSFT, CSD18533Q5 1 Features Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free S...
SI4425DDY-T1-GE3 Mosfet Power Transistor MOSFET -30V Vds 20V Vgs SO-8 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested APPLICATIONS •Load Switches - Notebook ...
SI7461DP-T1-GE3 Mosfet Power Transistor MOSFET -60V Vds 20V Vgs PowerPAK SO-8 FEATURES TrenchFET® power MOSFETs Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT...
SI7139DP-T1-GE3 Mosfet Power Transistor MOSFET -30V Vds 20V Vgs PowerPAK SO-8 FEATURES TrenchFET® power MOSFET 100 % Rg and UIS tested • Material categorization: APPLICATIONS • Notebook computer - Adaptor switc...
JY213L 90V Three-Phase Gate Driver with three independent high and low side referenced output channels DESCRIPTION The JY213L is a high-speed 3-phase gate driver for power MOSFET and IGBT devices with three ind...
...MOSFET DRIVER Detailed Product Description Voltage - Supply: 2.75 V ~ 30 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Supplier Device Package: 16-SOIC Configuration: High And Low Side, ...
...MOSFET 2A 600V field effect transistor TO-220F MOS FET N-Channel transistor Original Package Features: 1.6A, 600V, RDS(on) = 4.7Ω @VGS = 10 V Low gate charge ( typical 9.0 nC) Low Crss ( typical 5.0 pF) Fast...
10G03S 30V N+P-Channel Enhancement Mode MOSFET Description The 10G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shi...