Thermo Compression Anodic Bonding Equipment Thermal Pressure
Bonding Si Cu Al-Ge Material 600°C 2-8inch
Abstract of Thermo-Compression Anodic Bonding Equipment
Thermo Compression Anodic Bonding Equipment integrates dual-process
bonding technology combining thermo-compression and anodic bonding,
specifically designed for metallized packaging of 2"-8" wafers
(e.g., Si/Cu/Al-Ge systems) with a maximum operating temperature of
600°C. Thermo Compression Anodic Bonding Equipment through precise
control of temperature-pressure-voltage parameters, it achieves
high-strength hermetic sealing between wafers, making it suitable
for packaging applications requiring high temperature resistance
and reliability, such as MEMS devices and power semiconductors. The
key advantage lies in its simultaneous capability for metal
diffusion bonding (thermo-compression) and glass-silicon interface
bonding (anodic bonding).
Wafer Bonding System Technical Specifications
| Wafer Size: | 4-8 inch |
| Compatible Materials: | Si, Cu, Au, Au-Sn, Al-Ge, etc. |
| Max Temperature: | 600°C |
| Max Pressure: | 100kN, Control Accuracy ±1% |
| Heating Rate: | 30°C/min |
| Temperature Uniformity: | ≤±2% |
| Anode Voltage and Current: | ≤2kV, ≤100mA |
| Post-Bonding Accuracy: | ≤5μm, ≤2μm |
| Loading Method: | Cassette |
| Multi-mode Integration: | Edge detection, activation, cleaning, alignment, bonding |
| Bonding Atmosphere: | Vacuum, Methanol, Inert Gas (Optional) |
Thermo Compression Anodic Bonding Equipment supports 2"-8" wafer
processing with a maximum operating temperature of 600°C, pressure
range of 5-200 kN, and vacuum level ≤5×10⁻³ Pa. Thermo Compression
Anodic Bonding Equipment incorporates a high-precision closed-loop
control system for temperature (±1°C), pressure (fluctuation ≤±1%),
and voltage (0-2000 V adjustable for anodic bonding). Compatible
with material systems including Si, Cu, and Al-Ge, it is
specifically designed for hermetic packaging applications (leak
rate ≤1×10⁻⁸ Pa·m³/s) in MEMS and power devices.
Thermal Pressure Bonding
Au-Si bonding:
Working principle:
Thermo Compression Anodic Bonding Equipment:
Alignment Performance of Thermo-Compression Bonding (Accuracy
<2μm)
Applications
· MEMS Device Packaging: Thermo Compression Anodic Bonding
Equipment achieves hermetic encapsulation for
microelectromechanical systems, ensuring long-term operational
reliability.
· Power Semiconductor Packaging: Thermo Compression Anodic Bonding
Equipment facilitates high-temperature-resistant and thermally
conductive interfacial bonding for high-power chips.
· Sensor Hermetic Packaging: Thermo Compression Anodic Bonding
Equipment provides moisture/oxidation-proof protective
encapsulation for environmentally sensitive sensors.
· Optoelectronic Integration: Thermo Compression Anodic Bonding
Equipment enables heteromaterial bonding between optical and
electronic components to enhance photoelectric conversion
efficiency.
Machining effect——Glass-to-Silicon Anodic Bonding | Al-Ge Eutectic Bonding
