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AOD417 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD417 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance. With the excelle...
AOD454A N-Channel Enhancement Mode Field Effect Transistor General Description The AOD454A uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. With the excellent therm...
Product Description Product Detail Packaging Tape & Reel (TR) Part Status Active FET Type N and P-Channel, Common Drain FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 40V Current - Continuous Drain...
12H02TS 20V N+N-Channel Enhancement Mode MOSFET Description The 12H02TS uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level s...
8205S TSSOP-8 Plastic-Encapsulate MOSFETS General Description VDSS= V ID= 6.0 A 20 z RDS(on) < Ω@VGS = 4.5V 25 mz 20z RDS(on) < Ω@VGS = 2.5V 32 m 2532mm FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Lo...
10G03S 30V N+P-Channel Enhancement Mode MOSFET Description The 10G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shi...
HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. Thiscomplementary N and P channel MOSFET configurationis ideal for low I...
HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. Thiscomplementary N and P channel MOSFET configurationis ideal for low I...
WST2078 N&P-Channel MOSFET Description The WST2078 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small po...
20G04GD 40V N+P-Channel Enhancement Mode MOSFET Description The 20G04GD uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in P...
...% EAS guaranteed with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z...
5N20D / Y 200V N-Channel Enhancement Mode MOSFET DESCRIPTION The AP50N20D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level...
Mosfet Power Transistor NVHL040N65S3F M Superfet3 650V TO247 PKG N-Channel Features •OptimizedforhighperformanceSMPS,e.g.syncrec. •100%avalanchetested •Superiorthermalresistance •N-channel •Pb-freeleadplating;R...
Mosfet Power Transistor NVHL040N65S3F M Superfet3 650V TO247 PKG N-Channel Features •OptimizedforhighperformanceSMPS,e.g.syncrec. •100%avalanchetested •Superiorthermalresistance •N-channel •Pb-freeleadplating;R...
12H02TS 20V N+N-Channel Enhancement Mode MOSFET Description The 12H02TS uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level s...
8205S TSSOP-8 Plastic-Encapsulate MOSFETS General Description VDSS= V ID= 6.0 A 20 z RDS(on) < Ω@VGS = 4.5V 25 mz 20z RDS(on) < Ω@VGS = 2.5V 32 m 2532mm FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Lo...
10G03S 30V N+P-Channel Enhancement Mode MOSFET Description The 10G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shi...
HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. Thiscomplementary N and P channel MOSFET configurationis ideal for low I...
HXY4616 30V Complementary MOSFET Description The HXY4616 uses advanced trench technology to provideexcellent RDS(ON) and low gate charge. Thiscomplementary N and P channel MOSFET configurationis ideal for low I...
WST2078 N&P-Channel MOSFET Description The WST2078 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small po...