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20G04S 40V N+P-Channel Enhancement Mode MOSFET Description The 20G04S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shi...
WSF3012 N-Ch and P-Channel MOSFET Description The WSF3012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the sy...
... MOSFET DESCRIPTION The UTC 5N60K-TCQ is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugg...
... on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. FEATURES RDS(ON) < 1.75Ω @ VGS...
...Mosfet Switch 2N60 TO-220F Logic Level Transistor DESCRIPTION The UTC 2N60-TC3 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low...
... Mosfet Power Transistor 60P03D TO-252 30V Mosfet Power Transistor DESCRIPTION The AP60P03D uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge .Thisdevice is well s...
...Mosfet Power Transistor AP10N10DY For Switching Power Supplies Mosfet Power Transistor Description: The AP10N10D/Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge...
... to get better ruggedness and suitable to use in Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity or Invertors Mosfet Power Transistor Features VDS =100V I D =25 A RDS(ON) < ...
... MOSFET DESCRIPTION The D7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avala...
... MOSFET The AUP074N10 is a Silicon N-Channel MOSFET designed for efficient power switching applications. It features a low drain-source on-resistance (RDS(ON) = 6.5m typ.) and is easy to control due to its e...
... switching speeds. It features a depletion mode (normally on) operation, ESD improved capability, and a rugged polysilicon gate cell structure built with proprietary advanced planar technology. This MOSFET i...
...MOSFET Module The DME6010D integrates a 600V depletion mode MOSFET for startup and a 100V depletion mode MOSFET with patented UltraVt for stable and safe voltage regulation. This non-isolated high voltage re...
...MOSFET designed with advanced groove technology, offering excellent RDS(ON) and operating at low gate voltage. This MOSFET is suitable for applications such as lithium battery protection, wireless impact, an...
...Enhancement Mode MOSFET The FTE02P15G and FTP02P15G are 150V P-Channel Enhancement Mode MOSFETs from ARK Microelectronics. They feature a high-density cell design for low RDS(ON) and a rugged polysilicon gat...
...MOSFET The ARK Microelectronics FTZ30P35G is a 350V P-Channel MOSFET featuring ESD improved capability, proprietary advanced planar technology, and a rugged polysilicon gate cell structure. It offers fast sw...
..., and a rugged polysilicon gate cell structure. It offers fast switching speeds and is RoHS compliant with a halogen-free option available. This MOSFET is suitable for applications such as normally-on switch...
...MOSFET Product Overview The ASDM40R009NQ is a 40V N-Channel MOSFET from Ascend Semiconductor Co., Ltd. It offers excellent gate charge x RDS(on) product (FOM) and very low on-resistance (RDS(on)). Designed f...
...MOSFET Product Overview The BCW120N40M1 is a 1200V N-Channel Silicon Carbide Power MOSFET designed for high-efficiency power applications. It offers system efficiency improvement, higher frequency applicabil...
...MOSFET The Bestirpower BCBF120N80M1 is a 1200 V, 34 A, 80 m N-Channel Silicon Carbide Power MOSFET designed for high-efficiency power conversion applications. This MOSFET offers significant advantages includ...
...resistance and gate charge for high efficiency. Its optimized charge coupling technology and user-friendly design contribute to low EMI and reduced switching losses. This MOSFET is ideal for applications suc...