| Sign In | Join Free | My burrillandco.com |
|
...MOSFET N-CH 30V 300A 8HSOF Package Product Description Of IPT004N03LATMA1 IPT004N03LATMA1 is N-Channel 30 V 300A (Tc) 3.8W (Ta), 300W (Tc) MOSFET, Surface Mount, PG-HSOF-8-1 in Package. Specification Of IPT0...
...MOSFET Silicon Carbide Transistors Product Description Of NTH4L015N065SC1 NTH4L015N065SC1 is Silicon Carbide (SiC) MOSFET – EliteSiC,12mohm, 650 V, M2,TO-247-4L Transistors. Specification Of NTH4L015N065SC1 ...
...mosfet low power mosfet N-Channel Amplifiers • This device is designed for VHF/UHF amplifiers. • Sourced from process 50. Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter Value Units ...
...MOSFET General Features ■ 100% AVALANCHE TESTED ■ LOW INPUT CAPACITANCE AND GATE CHARGE ■ LOW GATE INPUT RESISTANCE DESCRIPTION The STx21NM60N is realized with the second generation. This revolutionary MOSFE...
...MOSFET N-CH 40V 90A TO252-3 Manufacturer: Infineon Product Category: MOSFET Technology: Si Mounting Style: SMD/SMT Package / Case: TO-252-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - ...
... Number of Drivers 2 Gate Type IGBT, N-Channel MOSFET Voltage - Supply 10V ~ 20V Logic Voltage - VIL, VIH 0.8V, 2.5V Current - Peak Output (Source, Sink) 1.......
H-Bridge Driver The 33186 is a monolithic H-Bridge ideal for fractional horsepower DC-motor and bi-directional thrust solenoid control. The IC incorporates internal control logic, charge pump, gate drive, and l...
6G03S 30V N+P-Channel Enhancement Mode MOSFET Description The 6G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shift...
20G04S 40V N+P-Channel Enhancement Mode MOSFET Description The 20G04S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shi...
WSF3012 N-Ch and P-Channel MOSFET Description The WSF3012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the sy...
... MOSFET DESCRIPTION The UTC 5N60K-TCQ is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugg...
... on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. FEATURES RDS(ON) < 1.75Ω @ VGS...
...Mosfet Switch 2N60 TO-220F Logic Level Transistor DESCRIPTION The UTC 2N60-TC3 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low...
... Mosfet Power Transistor 60P03D TO-252 30V Mosfet Power Transistor DESCRIPTION The AP60P03D uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge .Thisdevice is well s...
... ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current ID -2.3 A Pulsed Drain Current IDM -10 A Continuous S...
Mosfet Power Transistor STO33N60M6 MOSFET N-channel 600 V, 105 mOhm typ., 26 A Feature • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tes...
...Mosfet Power Transistor AP10N10DY For Switching Power Supplies Mosfet Power Transistor Description: The AP10N10D/Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge...
... to get better ruggedness and suitable to use in Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity or Invertors Mosfet Power Transistor Features VDS =100V I D =25 A RDS(ON) < ...
Mosfet Power Transistor STO33N60M6 MOSFET N-channel 600 V, 105 mOhm typ., 26 A Feature • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tes...
6G03S 30V N+P-Channel Enhancement Mode MOSFET Description The 6G03S uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shift...