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...% EAS guaranteed with full function reliability approved. Features z Advanced high cell density Trench technology z Super Low Gate Charge z...
5N20D / Y 200V N-Channel Enhancement Mode MOSFET DESCRIPTION The AP50N20D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level...
... Rds On) 10V Rds On (Max) @ Id, Vgs 2.4 mOhm @ 55A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 380nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @...
...Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 49A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 17.5 mOhm @ 25A, 1...
...Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 49A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 17.5 mOhm @ 25A, 1...
..., Vgs 44 mOhm @ 4.3A, 10V Vgs(th) (Max) @ Id 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12.2nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds ......
..., Vgs 22mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 1540pF @ ......
... is a 650V N-Channel Enhancement Mode MOSFET from the CoolFET II family, engineered with charge balance technology to deliver extremely low on-resistance and low gate charge performance. This MOSFET is ideal...
MOSFET Silicon N-Channel Product Overview The ASW65R046EFD, ASQ65R046EFD, and ASR65R046EFD are N-Channel Silicon MOSFETs designed for high-efficiency power applications. These enhancement-mode devices feature l...
...MOSFETs designed for power switching applications. They offer a low drain-source on-resistance and easy gate control, making them suitable for various power supply topologies including Boost PFC, single-ende...
Product Overview The ASA60R180EFD is a Silicon N-Channel MOS MOSFET designed for high-efficiency power conversion applications. It features a low drain-source on-resistance (RDS(ON) = 0.140 typ.) and is easy to...
... is a Silicon N-Channel Power MOSFET designed for high-efficiency power conversion applications. It features low drain-source on-resistance (RDS(on)) of 0.095 (typ.) and easy gate control. This enhancement m...
...MOSFET) designed for high-efficiency power conversion applications. It features a low drain-source on-resistance (RDS(ON) = 620m typ.) and is easy to control with a gate switching enhancement mode. Ideal for...
... Depletion-Mode Power MOSFET The DMS6014E is a depletion-mode (normally on) power MOSFET from ARK Microelectronics, featuring ESD improved capability and a proprietary advanced planar technology with a rugge...
.... This RoHS compliant and Halogen-free available MOSFET is 100% avalanche tested and is suitable for high efficiency DC/DC converters, synchronous rectification, UPS inverters, power management, and battery-...
...FTP02P15G are 150V P-Channel Enhancement Mode MOSFETs from ARK Microelectronics Co., Ltd. They feature a high-density cell design for low RDS(ON) and a rugged polysilicon gate cell structure. These MOSFETs a...
...MOSFET from ARK Microelectronics Co., Ltd. It features proprietary advanced planar technology, a rugged polysilicon gate cell structure, and advanced high Vth technology. This product is RoHS compliant and a...
... mode (normally-on) operation, free from secondary breakdown, and utilizes proprietary advanced planar technology with a rugged polysilicon gate cell structure. This MOSFET offers improved ESD capability, hi...
...MOSFETs, including models AUP056N08BGL, AUD056N08BGL, AUN050N08BGL, AUA056N08BGL, and AUB056N08BGL, are designed for efficient power management applications. They feature low drain-source on-resistance (RDS(...
... Power MOSFET designed for various applications requiring normally-on switches, surge current suppression, and constant current sources. Leveraging proprietary advanced planar technology with a rugged polysi...