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...Power Transistor 60P03D TO-252 30V Mosfet Power Transistor DESCRIPTION The AP60P03D uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge .Thisdevice is well suited fo...
Mosfet Power Transistor A3G20S250-01SR3 Airfast RF Power GaN Transistor, 1800-2200 MHz, 45 W Avg., 48 V This 45 W RF power GaN transistor is designed for cellular base station applications covering the frequenc...
... ruggedness and suitable to use in Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity or Invertors Mosfet Power Transistor Features VDS =100V I D =25 A RDS(ON) < 55mΩ...
...Power Transistor With High Switching Speed Mosfet Power Transistor Description: The AP8205S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as l...
Mosfet Power Transistor A3G20S250-01SR3 Airfast RF Power GaN Transistor, 1800-2200 MHz, 45 W Avg., 48 V This 45 W RF power GaN transistor is designed for cellular base station applications covering the frequenc...
...Power Transistor 60P03D TO-252 30V Mosfet Power Transistor DESCRIPTION The AP60P03D uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge .Thisdevice is well suited fo...
... ruggedness and suitable to use in Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity or Invertors Mosfet Power Transistor Features VDS =100V I D =25 A RDS(ON) < 55mΩ...
...Power Transistor With High Switching Speed Mosfet Power Transistor Description: The AP8205S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as l...
... in the 806 to 870-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the dra...
IKW20N60T IGBT Transistors IKW20N60T 600V 20A 166W Low Loss IGBT Power Transistor Description Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr...
Fgh60n60sfd Igbt Power Transistor 60a 600v To247 Igbt Transistors Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs ......
... in the 806 to 870-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the dra...
... military, aerospace, and commercial. Features: - High gain, medium power GaN on SiC Heterojunction FET - 50 W CW output power - 10.2 dB gain - 28 V operation - High efficiency - High frequency operation - L...
Product Overview The BC807 is a PNP type bipolar transistor in a SOT-23 plastic-encapsulated package. It is ideally suited for automatic insertion and features an epitaxial planar die construction. A complement...
Product Overview The BC807-16WQ through BC807-40WQ series are PNP general purpose bipolar transistors designed for switching and amplification applications. These devices meet UL-94 V-0 flammability rating and ...
Product Overview The S8550 is a PNP Silicon General Purpose Transistor designed for various electronic applications. It offers reliable performance with clearly defined electrical characteristics and absolute m...
Product Overview The LMBT3906LT1G is a PNP Silicon General Purpose Transistor from LESHAN RADIO COMPANY, LTD., offered in a SOT-23 (TO-236AB) package. It is designed for various electronic applications and is A...
Product Overview The LESHAN RADIO COMPANY, LTD. LMBTA92LT1G and LMBTA93LT1G are PNP Silicon High Voltage Transistors designed for telephony and professional communication equipment applications. They offer high...
Product Overview The LMBT2907LT1G and LMBT2907ALT1G are PNP Silicon General Purpose Transistors in a SOT-23 package. These devices are AEC-Q101 Qualified and PPAP Capable, making them suitable for automotive an...
Product Overview The LMBT3906TT1G is a PNP silicon general purpose transistor from LESHAN RADIO COMPANY, LTD., designed for a wide range of applications. Its features simplify circuit design, making it a versat...