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Total 38440 products for rf power transistor Manufacture & Suppliers

Agilent N1913A 110 GHz RF Power Meter High Speed Single Channel

...RF power from 9 kHz to 110 GHz over a wide –70 dBm to +44 dBm span. LAN, USB and GPIB make it drop-in code-compatible with legacy E4418/19B scripts yet future-proof for LXI networks, while support for all E-...

TESTRO ELECTRONICS LLC
China

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ISO Approval High Frequency Power Transistor Wide Band 700 To 6000MHz 15 Watt

...

VBE Technology Shenzhen Co., Ltd.
Guangdong,China

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MRFE6VP5300NR1 Mosfet Power Transistor 230MHz 27dB 300W TO-270 WB-4

MRFE6VP5300NR1 RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 27dB 300W TO-270 WB-4 High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industri...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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Easy Installation RF Power Amplifier Module 5850MHz - 6425MHz Output Frequency Range

...Band 3625 - 4200MHz RF Downconverter , L-Band 950MHz - 1525MHz RF Downconverter , RF Power Amplifier Module VBE RF Power Amplifier Module Instructions: VBE solutions of RF modules including radio frequency s...

VBE Technology Shenzhen Co., Ltd.
Guangdong,China

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Used Agilent Instruments 8481A RF Power Sensor 10MHz To 18GHz

...RF Power Sensor 10MHz To 18GHz Description of 8481A RF Power Sensor Features: Excellent SWR for reducing mismatch uncertainty Accurate calibration and traceability to US National Institute of Standards and T...

Shenzhen Meigaolan Electronic Instrument Co. Ltd
China

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1 - 2GHz RF Power Amplifier Module High Stability Low Power Consumption

1-2GHz , L-Band , RF Low Noise Amplifier LNA , RF Power Amplifier Module Model: VBP2GL VBE RF Power Amplifier Module Instructions: VBE solutions of RF modules including radio frequency signal source,radio frequ...

VBE Technology Shenzhen Co., Ltd.
Guangdong,China

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5.1-5.2GHz RF Power Amplifier Module Built In VCO 2.5dB Noise Figure ≤2ns Group Delay ≤±0.5dB Gain Flatness

5.1-5.2GHz RF Power Amplifier Module with built-in VCO 2.5dB Noise Figure ≤2ns Group Delay ≤±0.5dB Gain Flatness Product Description: RF Power Amplifier Module Our RF Power Amplifier Module is designed to provi...

VBE Technology Shenzhen Co., Ltd.
Guangdong,China

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P Channel DIP Mosfet Power Transistor 100V 40A 200W TO-220 IRF5210PBF Lead Free

...Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with ...

Shenzhen ATFU Electronics Technology ltd
Guangdong,China

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2SC5589 Toshiba 200kHz Mosfet Power Transistor For Switching

...Power Transistor for high speed switching application Description The 2SC5589 is a high voltage, high efficiency, simple to use, 4A buck regulator optimized for a variety of applications. The 2SC5589 works f...

Shenzhen ATFU Electronics Technology ltd
Guangdong,China

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Agilent 53147A RF Power Meter Microwave Counter DVM 20GHz Ultra Wideband

...RF Power Meter Description of 53147A Agilent RF Power Meter The Agilent 53147A is a full featured 20 GHz CW microwave frequency counter, a true power meter, and a dc DVM. It saves rack space in an ATE system...

Shenzhen Meigaolan Electronic Instrument Co. Ltd
China

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Keysight Agilent 8481A RF Power Sensor -60 to 20 dBm 10 MHz-18 GHz Plug-In Form Factor

...RF Power Sensor (-30 to +20dbm) Description of Keysight (Agilent) 8481A 10MHz-18 GHz, RF Power Sensor (-30 to +20dbm) Features: Excellent SWR for reducing mismatch uncertainty Accurate calibration and tracea...

Shenzhen Meigaolan Electronic Instrument Co. Ltd
China

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Anritsu ML2437A RF Power Meter With Graphics Display Ruggedized Housing

Anritsu ML2437A RF Power Meter Description of Anritsu ML2437A RF Power Meter The ML2437A and ML2438A Power Meters combine the advantages of thermal meter accuracy, diode meter speed, and peak power meter displa...

Shenzhen Meigaolan Electronic Instrument Co. Ltd
China

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600V 105 MOhm Typ. 26A N Channel Power Mosfet , Single High Power Transistor

...Power Transistor STO33N60M6 MOSFET N-channel 600 V, 105 mOhm typ., 26 A Feature • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested ...

Shenzhen Weitaixu Capacitor Co.,Ltd
Guangdong,China

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600V 105 MOhm Typ. 26A N Channel Power Mosfet , Single High Power Transistor

...Power Transistor STO33N60M6 MOSFET N-channel 600 V, 105 mOhm typ., 26 A Feature • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested ...

Shenzhen Weitaixu Capacitor Co.,Ltd
Guangdong,China

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PD57030-E RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Black

... Category: RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Transistor Polarity: N-Channel Technology: Si Id-Continuous Drain Current: 4 A Vds-drain-source breakdown voltage: 65 V Operating ...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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PD57030-E RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Black

... Category: RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Transistor Polarity: N-Channel Technology: Si Id-Continuous Drain Current: 4 A Vds-drain-source breakdown voltage: 65 V Operating ...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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10 - 13GHz Broadband RF Power Amplifier Hybrid Micro Assembly Process, Wide-Band RF Power Amplifier

...-13GHz , Ku-Band , Low Noise Amplifier , LNA , RF Power Amplifier Module VBE RF Amplifier Module Introductions : VBE Provide solutions of RF module including radio frequency signal source,radio frequency pow...

VBE Technology Shenzhen Co., Ltd.
Guangdong,China

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5850 - 6425MHz Rf Power Module , Radio Frequency Amplifier With SMA / BNC Connector

C-Band 5850-6425MHz RF Up converter , RF Power Amplifier Module VBE RF Power Amplifier Module Instructions: VBE solutions of RF modules including radio frequency signal source,radio frequency power amplifier(PA...

VBE Technology Shenzhen Co., Ltd.
Guangdong,China

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Custom Made Rf Power Amplifier Module , Ultra Low Noise Rf Amplifier 40 50 60dB Gain

2GHz , S-Band , Low Noise Amplifier LNA , RF Power Amplifier Module VBE RF Power Amplifier Module Introductions: VBE provide solutions of RF modules including radio frequency signal source,radio frequency power...

VBE Technology Shenzhen Co., Ltd.
Guangdong,China

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20W RF Power Amplifier Module 50Ω Spurious Suppression ≤-60dBc Input Output Impedance

... of ≤-30dBc. Its operating temperature range is from -40℃ to +85℃ with a VSWR of 1.5:1. The connector type is SMA-F. This module is ideal for applications requiring high power and high reliability in...

VBE Technology Shenzhen Co., Ltd.
Guangdong,China

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Rf Power Transistor

Total 38440 products for rf power transistor Manufacture & Suppliers

Agilent N1913A 110 GHz RF Power Meter High Speed Single Channel

ISO Approval High Frequency Power Transistor Wide Band 700 To 6000MHz 15 Watt

MRFE6VP5300NR1 Mosfet Power Transistor 230MHz 27dB 300W TO-270 WB-4

Easy Installation RF Power Amplifier Module 5850MHz - 6425MHz Output Frequency Range

Used Agilent Instruments 8481A RF Power Sensor 10MHz To 18GHz

1 - 2GHz RF Power Amplifier Module High Stability Low Power Consumption

5.1-5.2GHz RF Power Amplifier Module Built In VCO 2.5dB Noise Figure ≤2ns Group Delay ≤±0.5dB Gain Flatness

P Channel DIP Mosfet Power Transistor 100V 40A 200W TO-220 IRF5210PBF Lead Free

2SC5589 Toshiba 200kHz Mosfet Power Transistor For Switching

Agilent 53147A RF Power Meter Microwave Counter DVM 20GHz Ultra Wideband

Keysight Agilent 8481A RF Power Sensor -60 to 20 dBm 10 MHz-18 GHz Plug-In Form Factor

Anritsu ML2437A RF Power Meter With Graphics Display Ruggedized Housing

600V 105 MOhm Typ. 26A N Channel Power Mosfet , Single High Power Transistor

600V 105 MOhm Typ. 26A N Channel Power Mosfet , Single High Power Transistor

PD57030-E RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Black

PD57030-E RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Black

10 - 13GHz Broadband RF Power Amplifier Hybrid Micro Assembly Process, Wide-Band RF Power Amplifier

5850 - 6425MHz Rf Power Module , Radio Frequency Amplifier With SMA / BNC Connector

Custom Made Rf Power Amplifier Module , Ultra Low Noise Rf Amplifier 40 50 60dB Gain

20W RF Power Amplifier Module 50Ω Spurious Suppression ≤-60dBc Input Output Impedance