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... provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved. Mosfet Power Tr...
... • Superior commutation ruggedness • Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) Benefits • Improves system efficiency • Improves power density •...
... provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved. Mosfet Power Tr...
...Power Switch Transistor , Original Silicon Power Transistor General Description: The AP12N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as...
... provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved. Mosfet Power Tr...
... POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor Hi...
The Agilent 8481B lets you measure average RF power from 10 MHz to 18 GHz at levels up to +44 dBm, making a single probe sufficient for kW radar drivers, high-power amplifiers and Ku-band links. Its thermocoupl...
The Agilent 8481B lets you measure average RF power from 10 MHz to 18 GHz at levels up to +44 dBm, making a single probe sufficient for kW radar drivers, high-power amplifiers and Ku-band links. Its thermocoupl...
...Power Transistor IXFH160N15T2 160A 150V 880W N-Channel TrenchT2 Description DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehi...
...similar to the general MOSFET. The power MOSFETS are very special to handle the high level of powers. It shows the high switching speed and by comparing with the normal MOSFET, the power MOSFET will work bet...
...similar to the general MOSFET. The power MOSFETS are very special to handle the high level of powers. It shows the high switching speed and by comparing with the normal MOSFET, the power MOSFET will work bet...
...similar to the general MOSFET. The power MOSFETS are very special to handle the high level of powers. It shows the high switching speed and by comparing with the normal MOSFET, the power MOSFET will work bet...
...similar to the general MOSFET. The power MOSFETS are very special to handle the high level of powers. It shows the high switching speed and by comparing with the normal MOSFET, the power MOSFET will work bet...
...Power Transistor 60P03D TO-252 30V Mosfet Power Transistor DESCRIPTION The AP60P03D uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge .Thisdevice is well suited fo...
... ruggedness and suitable to use in Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity or Invertors Mosfet Power Transistor Features VDS =100V I D =25 A RDS(ON) < 55mΩ...
...Power Transistor With High Switching Speed Mosfet Power Transistor Description: The AP8205S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as l...
...Power Transistor 60P03D TO-252 30V Mosfet Power Transistor DESCRIPTION The AP60P03D uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge .Thisdevice is well suited fo...
... ruggedness and suitable to use in Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity or Invertors Mosfet Power Transistor Features VDS =100V I D =25 A RDS(ON) < 55mΩ...
...Power Transistor With High Switching Speed Mosfet Power Transistor Description: The AP8205S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as l...
... solution for applications requiring accurate, low-noise amplification. This module offers excellent RF performance with a wide gain range of 30 to 40dB, gain flatness of ≤±0.5dB, noise figure of 2.5dB, VSWR...