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The RF Sub–Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N–Channel Enhancement–Mode Lateral MOSFETs 945 MHz, 30 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs Designed for broadband commercial and ...
2SC1971 C1971 TO220 NPN epitaxial planar type transistor designed for RF power amplifiers Description: silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio appl...
2SC1971 C1971 TO220 NPN epitaxial planar type transistor designed for RF power amplifiers Description: silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio appl...
.... With support for multiple frequency bands over 1000MHz bandwidth. Equipped with high power transistors circuits, this amplifier is capable of delivering a maximum output power of 50W, ensuring strong and r...
... 6A TO-220 Power Transistor MOSFET Transistors for Switch Circuit TIP41C TIP42C Description The TIP41C is a base island technology NPN power transistor in TO-220 plastic package that make this device suitabl...
MMBTA43LT1G high voltage power mosfet transistors , rf power mosfet transistors High Voltage Transistors NPN Silicon ORDERING INFORMATION Device Order Number Package Type Shipping† MMBTA42LT1G SOT−23 (Pb−Free) ...
...Power Transistor , Custom Field Effect Transistor High Power Transistor DESCRIPTION The 30P06D uses advanced trench technology to provide excellent R DS(ON) and low gate charge .This device is suitable for u...
...Power Transistor , Custom Field Effect Transistor High Power Transistor DESCRIPTION The 30P06D uses advanced trench technology to provide excellent R DS(ON) and low gate charge .This device is suitable for u...
...Power Transistor 30P03X TO-252 Standard Size Mosfet Power Transistor Description The 30P03X uses advanced trench technology and design to provide excellent RDS(ON) with low gatecharge. It can be used in a wi...
...Power Transistor 30P03X TO-252 Standard Size Mosfet Power Transistor Description The 30P03X uses advanced trench technology and design to provide excellent RDS(ON) with low gatecharge. It can be used in a wi...
...Npn Power Transistor , Mosfet Driver Circuit Using Transistor Npn Power Transistor Applications DC to DC converters Low voltage motor controllers These are widely used in the low voltage switches which are l...
...Power Transistors / Field Effect Transistor AP5N10LI Complementary Power Transistors Description The AP5N10LI uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation wit...
...Npn Power Transistor , Mosfet Driver Circuit Using Transistor Npn Power Transistor Applications DC to DC converters Low voltage motor controllers These are widely used in the low voltage switches which are l...
...Power Transistors / Field Effect Transistor AP5N10LI Complementary Power Transistors Description The AP5N10LI uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation wit...
... voltage: 65 V Rds On-Drain Source On Resistance: 760 mOhms Operating frequency: 1 GHz Gain: 16.5 dB Output power: 18 W Minimum operating temperature: - 65 C Maximum operating temperature: + 150 C...
... voltage: 65 V Rds On-Drain Source On Resistance: 760 mOhms Operating frequency: 1 GHz Gain: 16.5 dB Output power: 18 W Minimum operating temperature: - 65 C Maximum operating temperature: + 150 C...
MRFE6VP6300HR5 RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 26.5dB 300W NI-780-4 These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog an...
MRFE6VP5600HR5 RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 25dB 600W NI-1230 These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and d...
MRFE6VP6300HR5 RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 26.5dB 300W NI-780-4 These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog an...