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...Power Transistor TIP142 for amplifier and switching applications TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Description The devices are manufactured in planar technology with “base island” ...
IKW20N60T IGBT Transistors IKW20N60T 600V 20A 166W Low Loss IGBT Power Transistor Description Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Contr...
Fgh60n60sfd Igbt Power Transistor 60a 600v To247 Igbt Transistors Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs ......
...RF Power Meter Description of N1913A RF Power Meter Agilent N1913A and N1914A EPM Series power meters offer powerful new features, yet are code compatible with the popular E4418B and E4419B EPM power meters....
Electronic components STPS15L30C-TR STS1DNC45 STV6419AG mosfet advantage price for original stock Feature Enhancement mode transistor Normally OFF switch Ultra fast switching No reverse-recovery charge ...
Electronic components STPS15L30C-TR STS1DNC45 STV6419AG mosfet advantage price for original stock Feature Enhancement mode transistor Normally OFF switch Ultra fast switching No reverse-recovery charge ...
... harmonic suppression of ≤-30dBc, input/output impedance of 50Ω, weight of 100g, spurious suppression of ≤-60dBc and VSWR of 1.5:1. Our RF Jammer Modules are designed for maximum performance and optimal effi...
... of high radiated RF power to monitoring-unit and PA-Circuit We can provide appropriate radiator to you, one radiator can be installed 2 50W-Jammer-Module. Main Specification: No. Item ......
...POWER TRANSISTOR PNP COMPLEMENT PBSS4160T Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: NPN Mounting Type: Surface Mount Package: SOT23 High Light: n channel mosfet tra...
...Rf Power Amplifier Ku Band 14.0GHz to 14.5GHz Frequency range high Power military level Ku Band RF Power Amplifier PA , RF Power Amplifier Module Technical Specifications of Power Amplifier: NO. Item Descrip...
... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies...
...Power Transistor AP6H06S 6A 60V Customized Mosfet Power Transistor Introduction MOSFET technology is ideal for use in many power applications, where the low switch on resistance enables high levels of effici...
... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies...
... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies...
... as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switching power supplies...
...Power Transistor AP6H06S 6A 60V Customized Mosfet Power Transistor Introduction MOSFET technology is ideal for use in many power applications, where the low switch on resistance enables high levels of effici...
...300W MOSFET POWER TRANSISTOR IRFB38N20DPBF N- CHANNEL SMPS MOSFET FET Type: N-Channel Drain To Source Voltage: 200V Current - Continuous Drain: 43A Drive Voltage: 10V High Light: high power mosfet transistor...
...POWER TRANSISTOR IRFR024NTRPBF D- PAK N- CHANNEL 55V 17A 45W Detailed Product Description FET Type: N-Channel Operating Temperature: -55°C ~ 175°C Moisture Sensitivity Level (MSL): 1 (Unlimited) Lead Free St...
X-Band (10GHz) RF Power Amplifier PA , RF Power Amplifier Module VBE RF Power Amplifier Module Introductions: VBE provide solutions of RF Modules including radio frequency signal source,radio frequency power am...
...RF Power Amplifier with 100 Watt RF Power Specification: Item Specification Frequency Range GSM 900MHz~980MHz Customized Gain 50dB Max RF Output Power 48.5dBm-50dBm Input Range ≤10dBm Gain Adjust Range 31dB ...