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Total 38440 products for rf power transistor Manufacture & Suppliers

100mA 230MHz RF Mosfet Transistor LDMOS 600 Watt MRFE6VP5600HR5

MRFE6VP5600HR5 RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 25dB 600W NI-1230 These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and d...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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N Channel Mosfet Power Transistor 2A 600V Circuit Switching For LED Drive

...Power Transistor 2A 600V Circuit Switching For LED Drive Mosfet Power Transistor Description The AP50N20D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary ...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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AP30N10P Mosfet Power Transistor For Motor Control 30A 100V TO-220

...Power Transistor For Motor Control 30A 100V TO-220 Mosfet Power Transistor Description: The AP30N10P uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate volt...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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N Channel Mosfet Power Transistor 2A 600V Circuit Switching For LED Drive

...Power Transistor 2A 600V Circuit Switching For LED Drive Mosfet Power Transistor Description The AP50N20D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary ...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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AP30N10P Mosfet Power Transistor For Motor Control 30A 100V TO-220

...Power Transistor For Motor Control 30A 100V TO-220 Mosfet Power Transistor Description: The AP30N10P uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate volt...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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AP5N10SI N Channel Mosfet Power Transistor For Battery Powered System

...Power Transistor For Battery Powered System N Channel Mosfet Power Transistor Description: The AP5N10SI is the single N-Channel logic enhancement mode power field effect transistors to provide excellent R DS...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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AP5N10SI N Channel Mosfet Power Transistor For Battery Powered System

...Power Transistor For Battery Powered System N Channel Mosfet Power Transistor Description: The AP5N10SI is the single N-Channel logic enhancement mode power field effect transistors to provide excellent R DS...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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Low Gate Charge Mosfet Power Transistor For Inverter Systems Management

...Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle ...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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Low Gate Charge Mosfet Power Transistor For Inverter Systems Management

...Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle ...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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Low Gate Charge Mosfet Power Transistor For Inverter Systems Management

...Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle ...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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Low Gate Charge Mosfet Power Transistor For Inverter Systems Management

...Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle ...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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High Gain Performance Mosfet Power Transistor NPN Darlington TIP122 ROHS Approved

...Transistors TIP122 Darlington NPN 100V 5A 2000mW TO220 Power Transistor TIP120, TIP121, TIP122 TIP125, TIP126, TIP127 Description The devices are manufactured in planar technology with “base island” layout a...

Shenzhen ATFU Electronics Technology ltd
Guangdong,China

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Darlington Bipolar Mosfet Power Transistor TIP147 10A Current 100V Voltage

...Transistors TO-3P TIP147 10A 100V PNP Darlington Bipolar Power Transistor TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Description The devices are manufactured in planar technology with “base...

Shenzhen ATFU Electronics Technology ltd
Guangdong,China

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UFD Series IGBT Power Transistor SGL160N60UFD 600V 160A 250W

IGBT Power Transistor SGL160N60UFD 600V 160A 250W UFD Series Gate Bipolar Transistors Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losse...

Shenzhen Retechip Electronics Co., Ltd
Guangdong,China

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N Channel Mos Field Effect Transistor , High Power Transistor -30V/-80A

...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reli...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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OEM High Voltage Mosfet Transistor / AP10H03DF Uhf Power Transistor

...cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approv...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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N Channel Mos Field Effect Transistor , High Power Transistor -30V/-80A

...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reli...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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N Channel Mos Field Effect Transistor , High Power Transistor -30V/-80A

...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reli...

Beijing Silk Road Enterprise Management Services Co.,LTD
China

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N Channel Mos Field Effect Transistor , High Power Transistor -30V/-80A

...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reli...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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OEM High Voltage Mosfet Transistor / AP10H03DF Uhf Power Transistor

...cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approv...

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong,China

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