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Total 38440 products for rf power transistor Manufacture & Suppliers

CYW43362KUBGT Rf Mosfet Transistors 2.4 GHz WLAN CMOS Amplifier

CYW43362KUBGT RF Power Transistor 2.4 GHz WLAN CMOS amplifier Package 69-UFBGA Type TxRx + MCU RF Family/Standard WiFi Protocol 802.11b/g/n Modulation 16QAM, 64QAM, BPSK, CCK, DSSS, QPSK, OFDM Frequency 2.4GHz ...

Shenzhen Sai Collie Technology Co., Ltd.
China

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RA03M8087M-101 Mosfet Power Transistor For Portable Radio H46S Package

... in the 806 to 870-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the dra...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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RA03M8087M-101 Mosfet Power Transistor For Portable Radio H46S Package

... in the 806 to 870-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the dra...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz

Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz...

VBE Technology Shenzhen Co., Ltd.
Guangdong,China

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MRF581 - Microsemi Corporation - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

...RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Description: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.. Low Noise - 2.5 dB @ 500 MHZ High Gain, Gain at Optimum Noise Figure = 1...

Mega Source Elec.Limited
China

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MJE3055T TO-220 Complementary Silicon Plastic Power Transistors

...Power Transistors Description 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS − 75 WATTS There are two limitations on the power handling ability of a transistor: average junction temperature and s...

Shenzhen Sai Collie Technology Co., Ltd.
China

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MRF581 - Microsemi Corporation - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Quick Detail: RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Description: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz Applications: · Low Noise - 2.5 dB @ 500 MHZ · High Gain, Gain ...

Mega Source Elec.Limited
China

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MRF6S9045NR1 - Freescale Semiconductor, Inc - RF Power Field Effect Transistors

Quick Detail: MRF6S9045NR1 - Freescale Semiconductor, Inc - RF Power Field Effect Transistors Description: Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high...

Mega Source Elec.Limited
China

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150mhz - 175mhz RF Power Mosfet Transistors M68702h For Fm Mobile Radio

...RF POWER MOSFET TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Status: Compliant Output Power: 60W Voltage: 12.5V High Light...

Shenzhen Huahao Gaosheng Technology Co., Ltd
China

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Airfast RF GaN Mosfet Power Transistor 1800 - 2200 MHz Working Frequency

Mosfet Power Transistor A3G20S250-01SR3 Airfast RF Power GaN Transistor, 1800-2200 MHz, 45 W Avg., 48 V This 45 W RF power GaN transistor is designed for cellular base station applications covering the frequenc...

Shenzhen Weitaixu Capacitor Co.,Ltd
Guangdong,China

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Airfast RF GaN Mosfet Power Transistor 1800 - 2200 MHz Working Frequency

Mosfet Power Transistor A3G20S250-01SR3 Airfast RF Power GaN Transistor, 1800-2200 MHz, 45 W Avg., 48 V This 45 W RF power GaN transistor is designed for cellular base station applications covering the frequenc...

Shenzhen Weitaixu Capacitor Co.,Ltd
Guangdong,China

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80W MRF173 High Power Transistor 28V High Efficiency CASE 211–11 Package

...RF Power Transistor Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of these devices make possible solid state t...

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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MRF6V2150NBR1 Mosfet Power Transistor N Channel Enhancement Mode Lateral

MRF6V2150NBR1 RF Power Transistors N-Channel Enhancement-Mode Lateral MOSFETs Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Qualified Up to a Maximum of ......

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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High Efficiency Mosfet Power Transistor 28.5dB 108MHz BLF174XR RF

... band Feature 1, Easy power control 2, Integrated ESD protection 3, Excellent ruggedness 4, High efficiency 5, Excellent thermal stability 6, Designed for broadband operation (HF to ......

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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150-175MHz RF Power Mosfet Transistors M68702H for FM Mobile Radio

M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor for FM MOBILE RADIO List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND 　 PART NUMBER MFG/BRAND SS513AT HONEYWELL 　 ......

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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150-175MHz RF Power Mosfet Transistors M68702H for FM Mobile Radio

M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor for FM MOBILE RADIO List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND 　 PART NUMBER MFG/BRAND SS513AT HONEYWELL 　 ......

Shenzhen Koben Electronics Co., Ltd.
Guangdong,China

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MW4IC2020GMB/NBR1 RF LDMOS Wideband Integrated Power Amplifiers FREESCALE Power Transistors RF

MW4IC2020GMB/NBR1 is a RF LDMOS Wideband Integrated Power Amplifier. Part NO: MW4IC2020GMB/NBR1 Brand: freescale Date Code: 08+ Quality Warranty: 3 Months Mounting Type: Screws Overview ......

Mega Source Elec.Limited
China

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MW5IC2030MBR1 RF LDMOS Wideband Integrated Power Amplifiers FREESCALE Power Transistors RF

MW5IC2030MBR1 is a RF LDMOS Wideband Integrated Power Amplifier. Part NO: MW5IC2030MBR1 Brand: freescale Date Code: 08+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega ......

Mega Source Elec.Limited
China

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MW6IC2240NBR1 RF LDMOS Wideband Integrated Power Amplifiers FREESCALE Power Transistors RF

MW6IC2240NBR1 is a RF LDMOS Wideband Integrated Power Amplifier. Part NO: MW6IC2240NBR1 Brand: freescale Date Code: 08+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega ......

Mega Source Elec.Limited
China

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MWE6IC9100NB RF LDMOS Wideband Integrated Power Amplifiers FREESCALE Power Transistors RF

MWE6IC9100NB is a RF LDMOS Wideband Integrated Power Amplifier. Part NO: MWE6IC9100NB Brand: freescale Date Code: 08+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega ......

Mega Source Elec.Limited
China

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