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Rectifier Device

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Total 892 products for rectifier device Manufacture & Suppliers

LM25011MYNOPB Power Management ICs For Improved Efficiency And Reliability

.... It is optimized for high-current, low-voltage applications like industrial, automotive, and consumer electronics systems. The device features an integrated, low-side and high-side MOSFET, a dual-channel sy...

Shenzhen Sai Collie Technology Co., Ltd.
China

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TPS63051RMWT Power Management Chip High Efficiency Buck Boost Package Case 12VFQFN

...combines a low-RDS(on) synchronous rectifier FET, a wide input voltage range, and a high-efficiency, high-voltage buck converter in a single package. This device is ideal for supplying high-performance micro...

Shenzhen Sai Collie Technology Co., Ltd.
China

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50mA Medical X Ray Tube for general medical diagnotic x-ray equipment

Digital Medical Device Stationary Anode Tube Insertion for Diagnostic X-ray System Description: This tube, XD3-3.5/100 is designed for general diagnostic x-ray unit and available for a nominal tube voltage with...

Hangzhou Sailray Import and Export Co. Ltd.
Zhejiang,China

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Current 31A Mosfet Power Transistor IRFR5305TRPBF Voltage 55V For Power Circuit General

... techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides ...

ChongMing Group (HK) Int'l Co., Ltd
China

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IRF7311TRPBF Electronic IC Chips Dual N Channel MOSFET HEXFET Power MOSFET

...International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that ...

ChongMing Group (HK) Int'l Co., Ltd
China

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IRF3205 Power MOSFET Transistor general purpose mosfet led diode smd

... Rated Desc Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with...

ChongMing Group (HK) Int'l Co., Ltd
China

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HEXFET Power MOSFET silicon power transistors IRF3205PBF

...Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized ...

ChongMing Group (HK) Int'l Co., Ltd
China

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IRF1010EPBF Power Mosfet Transistor Fast Switching HEXFET Power MOSFET

... Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast s...

ChongMing Group (HK) Int'l Co., Ltd
China

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IRFZ34NPBF Power Mosfet Transistor electrical ic HEXFET Power MOSFET

... Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast s...

ChongMing Group (HK) Int'l Co., Ltd
China

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IRFP044N Power Mosfet Transistor complementary power mosfet

... from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design...

ChongMing Group (HK) Int'l Co., Ltd
China

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IRLL024NTRPBF Power Mosfet Transistor HEXFET® Power MOSFET Fast Switching

... HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized devic...

ChongMing Group (HK) Int'l Co., Ltd
China

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High Voltage Spraying gun diodes stack ceramic capacitor Module 20KV301KB12 300pF 20KV

...integrated voltage doubler integrated rectifier module, which is part of the entire circuit integrated in a device, because of its integrated structure, so it is not subject to vibration, humidity, gas corro...

Shenzhen Topmay Electronic Co., Ltd.
Guangdong,China

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High Voltage Stacked Ceramic Capacitor 20KV 100PF D6*T5.1*L71mm

... integrated rectifier module, which is part of the entire circuit integrated in a device, because of its integrated structure, so it is not subject to vibration, humidity, gas corrosion, not afraid of dust, ...

Shenzhen Topmay Electronic Co., Ltd.
Guangdong,China

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IRF7601PBF general purpose mosfet Power Mosfet Transistor N Channel

... Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchi...

ChongMing Group (HK) Int'l Co., Ltd
China

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IRFR9120N Power Mosfet Transistor P - Channel switching power mosfet

... Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast s...

ChongMing Group (HK) Int'l Co., Ltd
China

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HEXFET Power Mosfet Transistor , power mosfet module IRF7329TRPBF

... New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized de...

ChongMing Group (HK) Int'l Co., Ltd
China

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Ultra Low On Resistance HEXFET power mosfet ic IRLML6402TRPBF

...Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized...

ChongMing Group (HK) Int'l Co., Ltd
China

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IRF7424TRPBF HEXFET Power MOSFET testing power transistors

... Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and loa...

ChongMing Group (HK) Int'l Co., Ltd
China

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Ultra Low On-Resistance HEXFET Power MOSFET P-Channel MOSFET SOT-23 Footprint Fast Switching IRLML6402TRPBF

... Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power ...

ChongMing Group (HK) Int'l Co., Ltd
China

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S6025L Triacs Sensitive Gate Power Mosfet Transistor SCRs 1-70 AMPS NON-SENSITIVE GATE

... offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If gate currents in the 12 µA to 500 µA ranges are ......

ChongMing Group (HK) Int'l Co., Ltd
China

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